This device has been transferred from Ampleon to Flip Electronics.

LDMOS 2-stage power MMIC

The BLM7G22S-60PB(G) is a dual path 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This device is perfectly suited as general purpose driver in the frequency range from 2100 MHz to 2200 MHz. Available in gull wing or flat lead outline.

Features and benefits

  • Integrated temperature compensated bias
  • Biasing of individual stages is externally accessible
  • Integrated current sense
  • Integrated ESD protection
  • Excellent thermal stability
  • High power gain
  • On-chip matching for ease of use (input matched to 50 Ω)
  • Designed for broadband operation (2100 MHz to 2200 MHz)
  • Compliant to Directive 2002/95/EC, regarding RoHS

Applications

  • RF power MMIC for W-CDMA base stations 2100 MHz - 2200 MHz

Downloads

Datasheet
All application notes
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLM7G22S-60PB

LDMOS 2-stage power MMIC

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 2100 2200 MHz
PL(3dB) nominal output power at 3 dB gain compression 60 W
Test signal: 2-c W-CDMA
Gp power gain PL(AV) = 1.6 W; VDS = 28 V 29.5 31.5 33.5 dB
RLin input return loss PL(AV) = 1.6 W; VDS = 28 V; IDq = 75 mA; IDq2 = 233 mA -17 -10 dB
ηD drain efficiency VDS = 28 V; f = 2140 Hz; IDq1 = 75 mA 10 11.3 %
ACPR adjacent channel power ratio PL(AV) = 1.6 W; VDS = 28 V; f = 2140 Hz; IDq = 75 mA; IDq2 = 233 mA -43 -40 dBc

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLM7G22S-60PB HSOP16F
(SOT1211-2)
sot1211-2_po Reel 13" Q1/T1 in Drypack Transferred Standard Marking BLM7G22S-60PBY
(9340 660 82518)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 VDS(A1) drain-source voltage of stage A1
2 VGSS(A2) gate sense FET and gate source voltage of stage A2
3 VDSS(A2) drain sense FET source voltage of stage A2
4 RF_IN_A RF input path A
5 VGSS(A1) gate sense FET and gate source voltage of stage A1
6 VDSS(A1) drain sense FET source voltage of stage A1
7 n.c. not connected
8 n.c. not connected
9 VDSS(B1) drain sense FET source voltage of stage B1
10 VGSS(B1) gate sense FET and gate source voltage of stage B1
11 RF_IN_B RF input path of B
12 VDSS(B2) drain sense FET source voltage of stage B2
13 VGSS(B2) gate sense FET and gate source voltage of stage B2
14 VDS(B1) drain-source voltage of stage B1
15 RF_OUT_A/VDS(A2) RF output path A / drain source voltage of stage A2
16 RF_OUT_B/VDS(B2) RF output path B / drain source voltage of stage B2
17 GND RF ground

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLM7G22S-60PB 9340 660 82518 BLM7G22S-60PBY Flip Electronics Buy Not available

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLM7G22S-60PB 9340 660 82518 BLM7G22S-60PBY Flip Electronics Buy Not available

Design support