Power LDMOS transistor

20 W plastic LDMOS power transistor for base station applications at frequencies from 400 MHz to 2700 MHz.

Features and benefits

  • High efficiency
  • Excellent ruggedness
  • Designed for broadband operation
  • Excellent thermal stability
  • High power gain
  • Integrated ESD protection
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • FDD/TDD LTE
  • GSM EDGE
  • CDMA
  • W-CDMA
  • MC-GSM
  • WiMAX

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 400 2700 MHz
PL(1dB) nominal output power at 1 dB gain compression 20 W
Test signal: 1-c W-CDMA
VDS drain-source voltage 1805-1880 MHz [0] 28 V
Gp power gain 1805-1880 MHz [0] 19 dB
ηD drain efficiency 1805-1880 MHz [0] 21 %
ACPR5M adjacent channel power ratio (5 MHz) 1805-1880 MHz [0] -45 [1] dBc
PL(AV) average output power 1805-1880 MHz [0] 3.1 W
IDq quiescent drain current 1805-1880 MHz [0] 180 mA

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLP9G0722-20G TO270
(SOT1483-1)
sot1483-1_po.pdf Reel 13" Q1/T1 in Drypack Active Standard Marking BLP9G0722-20GZ
(9349 600 92515)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLP9G0722-20G 9349 600 92515 BLP9G0722-20GZ RFMW Buy Not available
DigiKey Buy

Design support

Title Type Date
PCB_Design BLP9G0722-20(G) (Data-sheet) Design support 2017-06-09