BLC9G20XS-160AV
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLC9G20XS-160AV
Download datasheetPower LDMOS transistor
160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz
Features and benefits
- Excellent ruggedness
- High-efficiency
- Low thermal resistance providing excellent thermal stability
- Designed for broadband operation (1805 MHz to 1990 MHz)
- Asymmetric design to achieve optimum efficiency across the band
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent digital pre-distortion capability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Applications
- RF power amplifier for base stations and multi carrier applications in the 1805 MHz to 1990 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1805 | 1880 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 160 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| VDS | drain-source voltage | PL(AV) = 28 W [0] | 30 | V | ||
| Gp | power gain | PL(AV) = 28 W [0] | 16.6 | dB | ||
| ηD | drain efficiency | PL(AV) = 28 W [0] | 47 | % | ||
| PL(AV) | average output power | PL(AV) = 28 W [0] | 28 | W | ||
| ACPR | adjacent channel power ratio | PL(AV) = 28 W [0] | -30 | dBc | ||
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLC9G20XS-160AV | DFM6 (SOT1275-1) |
sot1275-1_po | Reel 13" Q1/T1 in Drypack | Discontinued | Standard Marking |
BLC9G20XS-160AVY (9349 600 38518) |
|
| Tray, NonBakeable, Multiple in Drypack | Discontinued | Standard Marking |
BLC9G20XS-160AVZ (9349 600 38517) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain 1 (main) |
|
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| 2 | D2 | drain2 (peak) | ||
| 3 | G1 | gate 1 (main) | ||
| 4 | G2 | gate 2 (peak) | ||
| 5 | VD | video decoupling (main) | ||
| 6 | VD | video decoupling (peak) | ||
| 7 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2017-05-24 | |
| Biasing Asymmetrical Doherty RF Power Transistor | Other type | 2016-08-31 | |
| Mounting and Soldering of RF transistors in Air Cavity Packages | Application note | 2022-09-15 | |
| Packages for RF Power Transistors | Leaflet | 2024-03-25 | |
| LDMOS Ruggedness Reliability | Other type | 2017-03-28 | |
| Efficiency Improvement of LDMOS Transistors for Base Stations: Towards the Theoretical Limit | Other type | 2017-05-02 | |
| LDMOS Technology for RF Power Amplifiers | Other type | 2017-05-03 | |
| RF Power Solutions for Wireless Infrastructure | Brochure | 2024-04-04 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| BLC9G20XS-160AV Model for ADS (Keysight Advanced Design System) | Simulation model | 2017-03-27 | |
| Printed-Circuit Board (PCB) BLC9G20XS-160AV (Data sheet) | Design support | 2018-04-26 |