Power LDMOS transistor

250 W LDMOS power transistor for base station applications at frequencies from 1930 MHz to 1990 MHz.

Features and benefits

  • Excellent ruggedness
  • Excellent video bandwidth enabling full band operation
  • High efficiency
  • Low thermal resistance providing excellent thermal stability
  • Designed for low memory effects providing excellent pre-distortability
  • Device can operate with the supply current delivered through video leads
  • Internally matched for ease of use
  • Integrated ESD protection
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)


  • RF power amplifier for W-CDMA base stations and multi carrier applications in the 1930 MHz to 1990 MHz frequency range


Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1930 1990 MHz
PL(1dB) nominal output power at 1 dB gain compression 250 W
Test signal: 2-c W-CDMA
VDS drain-source voltage 1930 to 1990 MHz [0] 28 V
Gp power gain 1930 to 1990 MHz [0] 19.3 dB
ηD drain efficiency 1930 to 1990 MHz [0] 31 %
PL(AV) average output power 1930 to 1990 MHz [0] 60 W
IDq quiescent drain current 1930 to 1990 MHz [0] 1400 mA
ACPR adjacent channel power ratio 1930 to 1990 MHz [0] -31 [1] dBc

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLC10G19LS-250WT SOT1271-2
sot1271-2_po.pdf Reel 13" Q1/T1 Active Standard Marking BLC10G19LS-250WTY
(9349 600 75518)
Bulk Pack Active Standard Marking BLC10G19LS-250WTZ
(9349 600 75517)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source
4 VD video decoupling
5 VD video decoupling
6 n.c not connected
7 n.c not connected


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
Quality and reliability disclaimer

Design support

Title Type Date
PCB Design BLC10G19LS-250WT (Data-sheet) Design support 2017-10-26