Power LDMOS transistor

550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.

Features and benefits

  • Excellent ruggedness
  • High efficiency
  • Low thermal resistance providing excellent thermal stability
  • Lower output capacitance for improved performance in Doherty applications
  • Designed for low memory effects providing excellent digital pre-distortion capability
  • Internally matched for ease of use
  • Integrated ESD protection
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)


  • RF power amplifiers for base stations and multi carrier applications in the 1805 MHz to 1880 MHz frequency range


Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1805 1880 MHz
PL(3dB) nominal output power at 3 dB gain compression 550 W
Test signal: 1-c W-CDMA
VDS drain-source voltage 1805 to 1880 MHz [0] 28 V
Gp power gain 1805 to 1880 MHz [0] 16.5 dB
ηD drain efficiency 1805 to 1880 MHz [0] 49.3 %
PL(AV) average output power 1805 to 1880 MHz [0] 91 W
ACPR adjacent channel power ratio 1805 to 1880 MHz [0] -29.4 [1] dBc

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
sot1258-4_po.pdf Reel 13" Q1/T1 in Drypack Active Standard Marking BLC10G18XS-550AVTY
(9349 601 28518)
Tray, NonBakeable, Multiple in Drypack Active Standard Marking BLC10G18XS-550AVTZ
(9349 601 28517)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D2P drain2 (peak)
2 D1M drain1 (main)
3 G1M gate1 (main)
4 G2P gate2 (peak)
5 S source
6 VDP video decoupling (peak)
7 VDM video decoupling (main)


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
Quality and reliability disclaimer

Design support

Title Type Date
PCB Design BLC10G18XS-550AVT (Data-sheet) Design support 2018-01-02