This device has been transferred from Ampleon to Rochester Electronics.

UHF power MOS transistor

Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range.

Features and benefits

  • High power gain
  • Easy power control
  • Gold metallization
  • Good thermal stability
  • Withstands full load mismatch
  • Designed for broadband operation.

Applications

  • Transmitter applications in the UHF frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 100 500 MHz
PL(1dB) nominal output power at 1 dB gain compression 2 W
Test signal: CW
Gp power gain PL = 2 W; VDS = 12.5 V 10 13 dB
ηD drain efficiency VDS = 12.5 V; f = 500 MHz; IDq = 10 mA 50 60 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF521 CRDB4
(SOT172D)
sot172d_po Bulk Pack Transferred Standard Marking BLF521,112
(9339 785 00112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 S source
2 G gate
3 D drain
4 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF521 9339 785 00112 BLF521,112 Rochester Electronics Buy Not available

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF521 9339 785 00112 BLF521,112 Rochester Electronics Buy Not available

Design support

Title Type Date
BLF521 12 5V 10mA S-parameter Data S-parameter 2012-06-08
BLF521 6 25V 10mA S-parameter Data S-parameter 2012-06-08