Power LDMOS transistor

A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (HF to 600 MHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)


  • Industrial, scientific and medical applications
  • Broadcast transmitter applications


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Power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 600 MHz
PL(1dB) nominal output power at 1 dB gain compression 350 W
Test signal: Pulsed RF
Gp power gain PL = 350 W; VDS = 50 V [0] 26.5 27.5 dB
RLin input return loss PL = 350 W [0] -10 dB
ηD drain efficiency PL = 350 W [0] 71 75 %

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
sot1223-2_po Reel 13" Q1/T1 in Drypack Active Standard Marking BLP05H6350XRY
(9340 689 93518)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 G2 gate 2
2 G1 gate1
3 D1 drain1
4 D2 drain2
5 S source


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLP05H6350XR BLP05H6350XRY BLP05H6350XR 3 3
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Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLP05H6350XR 9340 689 93518 BLP05H6350XRY RFMW Buy Request samples
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