This device has been transferred from Ampleon to Rochester Electronics.

HF/VHF power transistor

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the flange.

Features and benefits

  • High power gain
  • Easy power control
  • Excellent ruggedness
  • Source on mounting base eliminates DC isolators, reducing common mode inductance

Applications

  • L-band radar applications in the 1200 to 1400 MHz frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1200 1400 MHz
PL(1dB) nominal output power at 1 dB gain compression 35 W
Test signal: Pulsed RF
Gp power gain PL = 35 W; VDS = 36 V 13 dB
ηD drain efficiency PL = 35 W; VDS = 36 V; 1200 MHz ≤ f ≤ 1400 MHz; IDq = 50 mA 43 %
PL output power 35 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLL1214-35 SOT467C
(SOT467C)
sot467c_po Bulk Pack Transferred Standard Marking BLL1214-35,112
(9340 569 24112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLL1214-35 9340 569 24112 BLL1214-35,112 Rochester Electronics Buy Not available

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLL1214-35 9340 569 24112 BLL1214-35,112 Rochester Electronics Buy Not available

Design support

Title Type Date
Printed-Circuit Board (PCB) BLL1214-35 (Data sheet) Design support 2012-02-24