This device has been transferred from Ampleon to Rochester Electronics.

L-band radar LDMOS transistor

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange

Features and benefits

  • High power gain
  • Easy power control
  • Excellent ruggedness
  • Source on mounting base eliminates DC isolators, reducing common mode inductance

Applications

  • L-band radar applications in the 1200 to 1400 MHz frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1200 1400 MHz
PL(1dB) nominal output power at 1 dB gain compression 250 W
Test signal: Pulsed RF
Gp power gain PL = 250 W; VDS = 36 V 12 dB
ηD drain efficiency PL = 250 W; VDS = 36 V; 1200 MHz ≤ f ≤ 1400 MHz; IDq = 150 mA 42 %
PL output power 250 W
Pdroop(pulse) pulse droop power 0.6 dB
tr rise time PL = 250 W; VDS = 36 V 100 ns
tf fall time PL = 250 W; VDS = 36 V 100 ns

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLL1214-250 SOT502A
(SOT502A)
sot502a_po Bulk Pack Transferred Standard Marking BLL1214-250,112
(9340 569 25112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLL1214-250 9340 569 25112 BLL1214-250,112 Rochester Electronics Buy Not available

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLL1214-250 9340 569 25112 BLL1214-250,112 Rochester Electronics Buy Not available

No documentation available.