This device has been transferred from Ampleon to Rochester Electronics.

UHF power LDMOS transistor

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange.

Features and benefits

  • High power gain
  • Easy power control
  • Excellent ruggedness
  • Source on underside eliminates DC isolators, reducing common mode inductance
  • Designed for broadband operation (HF to 1 GHz)

Applications

  • Communication transmitter applications in the UHF frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 1000 MHz
PL(1dB) nominal output power at 1 dB gain compression 45 W
Test signal: CW
Gp power gain VDS = 26 V 14 dB
ηD drain efficiency VDS = 26 V; f = 960 MHz; IDq = 300 mA 46 %
PL output power 45 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF1046 SOT467C
(SOT467C)
sot467c_po Reel 11¼" Q1/T1 in LargePack Transferred Standard Marking BLF1046,135
(9340 553 84135)
Bulk Pack Transferred Standard Marking BLF1046,112
(9340 553 84112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF1046 9340 553 84135 BLF1046,135 Rochester Electronics Buy Not available
BLF1046 9340 553 84112 BLF1046,112 Rochester Electronics Buy Not available

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF1046 9340 553 84135 BLF1046,135 Rochester Electronics Buy Not available
BLF1046 9340 553 84112 BLF1046,112 Rochester Electronics Buy Not available

Design support

Title Type Date
BLF1046 28V 300mA S-parameter Data S-parameter 2012-07-22