Wide-band 20 Watt single-stage driver yields high efficiency, gain and extremely low thermal resistance

June 07, 2017

Ampleon today announced the launch of a multi-purpose 20 Watt single-stage RF power amplifier driver transistor. The BLP9G0722- 20G is a cost-effective 28 V LDMOS device that targets a wide range of applications from 0.4 to 2.7 GHz.

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Ampleon launches first devices using Gen9HV 50 V base station optimised process

June 06, 2017

Ampleon today announced the launch of a series of LDMOS RF power transistors using its Gen9HV 50 V LDMOS process. These devices are the first to use Ampleon’s latest 50 V process, a node that has been optimized for use in cellular infrastructure applications up to 1 GHz and delivers greatly increased efficiency and gain.

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Ampleon delivers lower power consumption and increased efficiency for wireless infrastructure PAs

May 23, 2017

Ampleon today announced the Gen10 series of LDMOS RF power transistors that deliver a record efficiency of 52 % and 18 dB of gain (at 1.8 GHz) in wireless infrastructure power amplifiers.

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Ampleon showcases LDMOS and GaN RF PA portfolio and high power RF solutions at IMS

May 10, 2017

Ampleon today announced its participation at the forthcoming International Microwave Symposium, IMS.

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Ampleon showcases LDMOS and GaN RF PA portfolio and high power RF solutions at EDI CON

April 12, 2017

Ampleon today announced its participation at the forthcoming Electronic Design Innovation Conference (EDI CON) held in Shanghai, China April 25 – 27, 2017.

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Ampleon opens RF Energy Competence Center in Hefei

October 20, 2016

Ampleon today announced the opening of its RF Energy Competence Center in Hefei, PRC. The company is recognized as a leader in the RF Energy market and continues to invest in the emerging use of this technology.

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Ampleon extends line up of Gen 9 LDMOS RF transistors and pallets

October 04, 2016

Ampleon today announced the availability of a complete line-up of RF power transistors and pallets based on the latest Gen 9 LDMOS process technology.

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Ampleon adds 1900 Watt LDMOS power transistor to its extremely rugged line-up

October 03, 2016

Ampleon today announced the BLF189XR, the latest member of its renowned family of extremely rugged “XR” LDMOS power transistors designed specifically for use in high power amplifiers operating in the 10 – 500 MHz.

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アンプレオン 1900ワット LDMOSパワートランジスタの新製品を発表

October 03, 2016

アンプレオンは高堅牢性のLDMOS RFパワートランジスタであるXRファミリ(eXtremely Rugged) の新製品BLF189XRを発表しました。

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Ampleon launch ultra compact two-stage Doherty amplifier for 4.5 G / LTE Advanced Pro applications

September 27, 2016

Ampleon today announced a new family of integrated Doherty power amplifier devices aimed at LTE Advanced Pro / 4.5G massive-MIMO base station applications.

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Ampleon demonstrates Wideband System Solution featuring Xilinx DPD IP at IMS 2016

May 24, 2016

Ampleon today announced it will demonstrate a wideband system solution at IMS 2016 that uses Xilinx’s Digital Pre-Distortion (DPD) IP with Xilinx All Programmable SoC and MPSoC technology.

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Credit card sized 250 Watt 2.4-2.5 GHz reference design targets RF cooking and industrial heating applications

May 24, 2016

Ampleon today announced the availability of a 250 Watt 2.4 – 2.5 GHz amplifier reference design. Believed to be the world’s smallest 250 Watt design, the MicroBlaze 250 measures just 80 x 40 x 5 mm, and is ideal for use in RF cooking and industrial heating designs where power controllability and a modular design approach are key criteria.

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ITAR-free S band SWaP optimised pallets speed time to market for radar applications

May 23, 2016

Ampleon today announced two 400 Watt S band power amplifier pallets designed for a variety of civil and military radar applications.

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RF Power reference guide available for download

May 19, 2016

Ampleon today announced the launch of its “24/7 RF” e-book manual. This, the first edition of the guide, is an essential reference book for any engineer working on RF power amplifier designs.

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Ampleon unveils full portfolio of PA solutions for small cells and massive MIMO

May 18, 2016

Ampleon today announced a wide portfolio of RF Power solutions for medium power and massive-MIMO applications.

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Ampleon GaN RF transistor family complements LDMOS portfolio with high-efficiency and wideband solutions for mobile broadband

May 17, 2016

Ampleon today announced its second generation of 50 Volts 0.5 um GaN on SiC RF power transistors, dedicated for mobile broadband applications.

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Innovative air cavity packaging brings significant cost reductions and performance improvements to RF transistors used in wireless infrastructure

May 12, 2016

Ampleon today announced the availability of a new package platform that will be rolled out across the entire LDMOS and GaN product portfolio.

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1400 CW extremely rugged reliable RF transistor withstands VSWR > 65:1

May 03, 2016

Ampleon today announced the availability of the BLCU188XRS, a 1400W, CW capable, high power extremely rugged transistor constructed in a thermally optimized air cavity ACP3 copper flanged plastic package.

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Ampleon showcases latest innovations at IMS

April 14, 2016

Ampleon today announced details of its participation at the forthcoming IEEE MTT International Microwave Symposium (IMS) held in San Francisco 22 – 27 May, 2016.

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Ampleon showcases RF energy innovations at EDI CON

April 07, 2016

Ampleon today announced its participation at the forthcoming Electronic Design Innovation Conference - EDI CON – held in Beijing, China between April 19 – 21, 2016.

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Ampleon 在电子设计创新会议上展示RF能源创新产品

April 07, 2016

Ampleon宣布参加2016年4月19至21日在北京举办的电子设计创新会议(Electronic Design Innovation Conference - EDI CON).

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Ampleon and Midea collaboration results in world’s first solid state oven

March 21, 2016

Ampleon and Midea, a leading global consumer appliance manufacturer, today announced the results of a yearlong joint collaboration into the use of solid state technology for compact oven design.

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アンプレオンとMideaはソリッド・ステート・クッキング技術を採用した世界初のオーブンレンジのコラボレーションを発表

March 21, 2016

アンプレオンと中国で最大級の家電生産企業Mideaはソリッド・ステート・クッキング技術をコンパクトなオーブンレンジに使用する長年にわたるコラボレーションの結果を発表しました。

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Ampleon和美的合作开发世界上首台固态烤箱

March 21, 2016

荷兰奈梅亨 – 2016年3月21日 - Ampleon和世界主要的消费电器制造商美的公司 (Midea) 宣布,两家企业一年来合作使用固态技术开发紧凑型烤箱设计已获得成果,促成美的公司发布相信是市场上第一台世界首创的固态RF能源烤箱。

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Visit us at EDI CON 2016

March 20, 2016

At our booth # 607, we will display our products and solutions and will be conducting demonstrations. Our experts will be there to answer any questions you may have.

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Visit us at IMS2016

March 20, 2016

The IEEE MTT International Microwave Symposium (IMS) is the premier annual international meeting for technologists involved in all aspects of microwave theory and practice. For the very first time, Ampleon, the leading global partner in RF Power, will participate in the exhibition and present papers in various sessions.

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RF transistor delivers >50% efficiency at 150W DVB-T for ultra wideband asymmetrical Doherty applications

March 08, 2016

Ampleon today announced the launch of the BLF888E RF power transistor designed for DVB-T UHF asymmetrical wideband Doherty amplifier applications.

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BLF888E ; TV放送送信機用RFトランジスタ 高周波数帯域 非対称ドハティアンプ構成で効率50%以上, 出力パワー150Wを実現

March 08, 2016

アンプレオンは本日、RFパワートランジスタの新製品「BLF888E」の製品リリースを発表しました。

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Ampleon and HAS University collaborate on full spectrum lighting research for horticultural applications

February 09, 2016

Ampleon today announced that it has entered into a collaborative research project with the HAS University of Applied Sciences in Den Bosch, The Netherlands into the use of full spectrum lighting for horticultural applications. In addition the project will validate and summarize current research and investigations that are available.

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Extremely-rugged-LDMOS-RF-power-transistors-for-HF--VHF-and-ISM-applicationsin-in-cost-effective-overmoulded-packages

January 13, 2016

Nijmegen, The Netherlands – January, 2016. Ampleon today announced the release of a comprehensive portfolio of overmoulded plastic (OMP) RF power transistors using the well known, extremely rugged LDMOS technology.

German, Italian and Chinese translations are available.

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Ampleon introduces GaN RF power transistors in 10 to 200W ratings

December 14, 2015

Ampleon today announced the extension of its portfolio of GaN RF power transistors based on a 0.5um HEMT process technology. Comprising 10W, 30W, 50W and 100W devices, over ten transistors are currently available suitable for multiple applications such as drivers up to C band, through to 100W and 200W push-pull packages for use in final stages up to S band.

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Welcome

December 07, 2015

Welcome to Ampleon.com, a website as new as our company! Created in 2015, we are shaped by 50 years of RF power leadership.

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