Latest Products Highlighted in the Videos
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Type Number | Description |
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ART2K0FE | Next-Generation Extremely Rugged 2000 Watt LDMOS Power Transistor with the Industry’s Highest Safety Margin in an Air-Cavity Ceramic Package |
ART2K0PE | Next-Generation Extremely Rugged 2000 Watt LDMOS Power Transistor with the Industry’s Highest Safety Margin in a Low Thermal Resistance Over-Molded Plastic Package |
BLC10G19XS-600AVT | 60 W High-Efficiency LDMOS Doherty @ 1.9 GHz |
BLF974P | Next-Generation 500 Watt Discrete Wideband LDMOS Transistor (Successor to the BLF574) Operating at 50 V |
BLF978P | Next-Generation 1200 Watt Discrete Wideband LDMOS Transistor (Successor to the BLF578) Operating at 50 V |
BLF989E | Next-Generation 1000 Watt Discrete Wideband LDMOS Transistor with the Highest Efficiency in Asymmetric UWB Doherty |
BLM10D1822-60ABG | Integrated PA for Multi-Band MIMO Driver and m-MIMO Final Applications @ 1.8–2.2 GHz |
BLP0427M9S20 | High efficient 20 W plastic LDMOS power transistor |
BLP0427M9S20 | High efficient 20 W plastic LDMOS power transistor |
BLP15H9S100G | New 50 V Broadband Driver Amplifier Capable of Continuous Wave (CW) and Delivering 100 Watts Output Power Over the Entire Frequency Band from HF to 1500 MHz |
BLP2425M10S250P | Next-Generation 2.4 GHz Amplifiers Capable of Delivering 250 Watts of CW power in a Robust and Cost Effective Plastic Overmolded Package |
BLP9LA25S | New 13.6 V Broadband Amplifier Capable of Continuous Wave (CW) and Pulsed Signal Operation Over the Entire Frequency Band from HF to 941 MHz |
Latest Press Releases
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Title | Language | Date | Reference |
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Ampleon highlights virtual IMS 2020 conference and exhibition plans | English | 2020/07/31 | APN081 |
Ampleon simplifies RF amplifier system design with launch of 600-Watt 915 MHz ISM pallet | English | 2020/07/06 | APN071 |
埃賦隆推出600W 915MHz ISM託盤放大器,簡化射頻放大器系統設計 | Traditional Chinese | 2020/07/06 | APN071 |
埃赋隆推出600W 915MHz ISM托盘放大器,简化射频放大器系统设计 | Simplified Chinese | 2020/07/06 | APN071 |
Ampleon releases “breakthrough” Si LDMOS devices reaching 80% efficiency for VHF and UHF applications | English | 2020/07/02 | APN073 |
埃賦隆推出“突破性” Si LDMOS器件,在VHF和UHF應用中效率達到80% | Traditional Chinese | 2020/07/02 | APN073 |
埃赋隆推出“突破性” Si LDMOS器件,在VHF和UHF应用中效率达到80% | Simplified Chinese | 2020/07/02 | APN073 |